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4DS Memory Advances to 20nm Breakthrough with Fifth Platform Lot Success
7:03pm on Monday 2nd of June, 2025 AEST
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Semiconductors
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4DS Memory Advances to 20nm Breakthrough with Fifth Platform Lot Success
7:03pm on Monday 2nd of June, 2025 AEST
Key Points
Successful completion of Fifth Platform Lot testing and characterization
De-risking manufacturing process for 20nm memory cell array in Sixth Platform Lot
Scaling memory cells from 60nm to 20nm, a ninefold reduction in area
Key process optimizations identified for patterning, etching, and memory stack adjustments
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4Ds Memory (ASX:4DS)
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