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4DS Memory Advances 20nm ReRAM Milestone, Secures $8.6M Capital Boost

4:28am on Monday 2nd of June, 2025 AEST Technology
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4DS Memory Advances 20nm ReRAM Milestone, Secures $8.6M Capital Boost

4:28am on Monday 2nd of June, 2025 AEST
Key Points
  • Successful manufacturing of first 20nm memory cell array in Sixth Platform Lot
  • Completion and optimization insights from Fifth Platform Lot testing
  • Raised $6 million via placement and $2.6 million through Share Purchase Plan with attaching options
  • Ongoing design collaboration with Infineon Technologies LLC on custom ReRAM test chip
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