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4DS Memory Advances 20nm ReRAM Tech, Secures $6M Capital Boost
6:18pm on Sunday 1st of June, 2025 AEST
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Semiconductors
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4DS Memory Advances 20nm ReRAM Tech, Secures $6M Capital Boost
6:18pm on Sunday 1st of June, 2025 AEST
Key Points
Successful characterization of Fifth Platform Lot with 60nm memory cells
Ongoing development of Sixth Platform Lot targeting 20nm memory cells
Design Agreement signed with Infineon for custom ReRAM test chip
Capital raising of $6 million via placement plus $2 million share purchase plan
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4Ds Memory (ASX:4DS)
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