Latest Memory Technology News

Weebit Nano has appointed seasoned ASX director Anne Templeman-Jones as Deputy Chair, aiming to strengthen its engagement with Australian investors and government amid plans for growth.

dorsaVi confirms its licensed 40nm Resistive RAM technology delivers high-speed, low-power performance ideal for next-generation embedded and edge AI platforms. This breakthrough supports advanced wearable sensors and neuromorphic computing applications.

4DS Memory reports initial testing of its latest 20nm memory cell arrays fell short of expectations, potentially delaying its Interface Switching ReRAM technology development. Further analysis and testing are underway to pinpoint the issues.

dorsaVi has secured exclusive worldwide rights to cutting-edge RRAM technology from NTU Singapore, promising to revolutionize its wearable sensor products with enhanced performance and energy efficiency. This strategic move positions the company for expansion into healthcare, elite sports, and industrial IoT markets.

4DS Memory Limited has successfully manufactured its first 20nm memory cell array, marking a pivotal step in its ReRAM technology development, while raising $8.6 million through a placement and Share Purchase Plan to fuel ongoing innovation.

Weebit Nano has marked a pivotal quarter by achieving automotive-grade AEC-Q100 qualification for its ReRAM technology, advancing integration with semiconductor giant onsemi, and securing a robust cash position to fuel growth.

4DS Memory Limited reports successful testing of its 60nm memory cells and progresses toward 20nm technology, alongside a $6 million capital raise and a new design partnership with Infineon.

4DS Memory Limited has completed critical testing on its Fifth Platform Lot, paving the way for manufacturing a 20nm memory cell array in the upcoming Sixth Platform Lot. This milestone could position 4DS’s ReRAM technology as a next-generation memory solution.