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4DS Memory Reports $9.68M Loss Amid 20nm ReRAM Development Hurdles

4DS Memory Limited posted a $9.68 million loss for FY2025 as it advanced its 20nm ReRAM technology, encountering manufacturing setbacks that prompted a detailed root cause analysis. The company secured $8 million in capital to support ongoing development and strategic partnerships.
Sophie Babbage
29 Aug 2025

4DS Memory Faces Setback in Sixth Platform Lot Testing Amid $10.2M Cash Buffer

4DS Memory Limited reports mixed progress in its June 2025 quarter, with ongoing root cause analysis into unexpected wafer test results and a stable cash position of $10.2 million.
Sophie Babbage
30 July 2025

4DS Memory’s Sixth Platform Lot Hits Snag, Development Timeline at Risk

4DS Memory reports initial testing of its latest 20nm memory cell arrays fell short of expectations, potentially delaying its Interface Switching ReRAM technology development. Further analysis and testing are underway to pinpoint the issues.
Sophie Babbage
16 June 2025

4DS Memory Advances 20nm ReRAM Milestone, Secures $8.6M Capital Boost

4DS Memory Limited has successfully manufactured its first 20nm memory cell array, marking a pivotal step in its ReRAM technology development, while raising $8.6 million through a placement and Share Purchase Plan to fuel ongoing innovation.
Sophie Babbage
30 Apr 2025

4DS Memory Advances 20nm ReRAM Tech, Secures $6M Capital Boost

4DS Memory Limited reports successful testing of its 60nm memory cells and progresses toward 20nm technology, alongside a $6 million capital raise and a new design partnership with Infineon.
Victor Sage
31 Jan 2025

4DS Memory Advances to 20nm Breakthrough with Fifth Platform Lot Success

4DS Memory Limited has completed critical testing on its Fifth Platform Lot, paving the way for manufacturing a 20nm memory cell array in the upcoming Sixth Platform Lot. This milestone could position 4DS’s ReRAM technology as a next-generation memory solution.
Victor Sage
15 Jan 2025