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4DS Memory Advances 20nm ReRAM Milestone, Secures $8.6M Capital Boost

4DS Memory Limited has successfully manufactured its first 20nm memory cell array, marking a pivotal step in its ReRAM technology development, while raising $8.6 million through a placement and Share Purchase Plan to fuel ongoing innovation.
Sophie Babbage
30 Apr 2025

4DS Memory Advances 20nm ReRAM Tech, Secures $6M Capital Boost

4DS Memory Limited reports successful testing of its 60nm memory cells and progresses toward 20nm technology, alongside a $6 million capital raise and a new design partnership with Infineon.
Victor Sage
31 Jan 2025

4DS Memory Advances to 20nm Breakthrough with Fifth Platform Lot Success

4DS Memory Limited has completed critical testing on its Fifth Platform Lot, paving the way for manufacturing a 20nm memory cell array in the upcoming Sixth Platform Lot. This milestone could position 4DS’s ReRAM technology as a next-generation memory solution.
Victor Sage
15 Jan 2025